feb.1999 mitsubishi transistor modules QM300DY-2H high power switching use insulated type outline drawing & circuit diagram dimensions in mm application ac motor controllers, ups, cvcf, dc motor controllers, nc equipment, welders QM300DY-2H ? i c collector current ........................ 300a ? v cex collector-emitter voltage ......... 1000v ? h fe dc current gain............................... 75 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 114 27 25 21.5 18 c 2 e 1 e 2 c1 b 2 e 2 6 15 b 1 e 1 6 b 1 x b 2 x 6 638 93 114 b 2 x c 2 e 1 b 1 x b 2 e 2 c 1 e 1 b 1 4 f 6.5 93 tab#110, t=0.5 8 5.5 2?6 21 8 17 8 17 31 21 1 label 34.5 6.5 (7) tab#187, t=0.8 14 21 m8 7 e 2 1
feb.1999 symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m6 main terminal screw m8 mounting screw m6 typical value ratings 1000 1000 1000 7 300 300 1980 16 3000 C40~+150 C40~+125 2500 1.96~2.94 20~30 8.83~10.8 90~110 1.96~2.94 20~30 1200 absolute maximum ratings (tj=25 c, unless otherwise noted) parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight unit v v v v a a w a a c c v nm kgcm nm kgcm nm kgcm g mitsubishi transistor modules QM300DY-2H high power switching use insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 75/100 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =1000v, v eb =2v v cb =1000v, emitter open v eb =7v i c =300a, i b =6a Ci c =300a (diode forward voltage) i c =300a, v ce =2.8v/5v v cc =600v, i c =300a, i b1 =Ci b2 =6a transistor part (per 1/2 module) diode part (per 1/2 module) conductive grease applied (per 1/2 module) typ. max. 4.0 4.0 400 2.5 3.5 1.8 3.0 15 3.0 0.063 0.30 0.04
feb.1999 2 10 1 10 0 10 ? 10 3 10 2 10 1 10 0 10 ? 10 ? 10 2 10 1 10 0 10 ? 10 500 400 300 200 100 0 012345 t j =25? i b =4.0a i b =2.0a i b =1.0a i b =0.5a i b =0.2a 7 5 3 2 7 5 3 2 7 5 3 2 2.2 1.8 2.6 3.4 3.0 3.8 v ce =2.8v t j =25? 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 t j =25? t j =125? v be(sat) v ce(sat) 2 10 1 10 0 10 0 10 1 10 2 10 3 10 i b =6a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 2 10 3 10 1 10 0 10 4 10 3 10 2 10 1 10 444 t j =25? t j =125? v ce =5.0v v ce =2.8v 5 4 3 2 1 0 7 5 3 2 7 5 3 2 7 5 34 4 4 0 10 1 10 3 2 i c =200a i c =400a i c =300a t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 t j =25? t j =125? v cc =600v i b1 =? b2 =6a t s t f t on performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM300DY-2H high power switching use insulated type
feb.1999 3 10 2 10 1 10 0 10 ? 10 ? 10 ? 10 ? 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 800 0 0 200 400 600 800 600 400 200 1000 t j =125? i b2 =?2a i b2 =?a 2 10 7 5 4 3 2 1 10 7 5 4 3 2 0 10 23457 0 10 23457 1 10 t j =25? t j =125? v cc =600v i c =300a i b1 =6a t s t f 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 t c =25? dc 2 10 3 10 1 10 0 10 3 10 2 10 1 10 0 10 444 1ms 100? 50? 200? 7 5 3 2 7 5 3 2 7 5 3 2 0 0.4 0.8 1.2 1.6 2.0 t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 0.08 0 7 5 3 2 1 10 0 10 0 10 444 4 0.07 0.06 0.05 0.04 0.03 0.02 0.01 non?epetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) foward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM300DY-2H high power switching use insulated type z th (jCc) ( c/ w)
feb.1999 1 10 7 5 3 2 0 10 7 5 4 3 2 0 400 1200 2000 2800 3200 2 10 4 1600 800 2400 7 5 3 2 7 5 3 2 7 5 3 2 0.40 0.32 0.24 0.16 0.08 0 7 5 3 2 1 10 0 10 0 10 ? 10 ? 10 ? 10 444 42 7 5 34 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 44 4 3 10 2 10 1 10 0 10 0 10 1 10 2 10 3 10 ? 10 0 10 1 10 2 10 q rr i rr t rr t j =25? t j =125? v cc =600v i b1 =? b2 =6a i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM300DY-2H high power switching use insulated type z th (jCc) ( c/ w) t rr ( m s)
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